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| PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * Extremely low on state voltage drop 1.0V typical at 5.0A * Extremely low VCE(on) variation from lot to lot * Industry standard TO-247AC package G E C VCES = 1200V VCE(on) typ. = 1.46V @VGE = 15V, IC = 20A N-channel Benefits * High current density systems * Optimized for specific application conditions * Lower voltage drop than many high voltage MOSFETs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 33 20 66 66 20 250 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6.0(0.21) Max. 0.77 --- 40 --- Units C/W g (oz) www.irf.com 1 9/23/98 IRG4PH40S Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 -- Emitter-to-Collector Breakdown Voltage 18 -- Temperature Coeff. of Breakdown Voltage -- 1.23 -- 1.46 Collector-to-Emitter Saturation Voltage -- 1.71 -- 1.51 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -9.6 Forward Transconductance 17 26 -- -- Zero Gate Voltage Collector Current -- -- Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 1.75 IC = 20A VGE = 15V -- IC = 33A See Fig.2, 5 V -- IC = 20A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 50 V, IC = 20A 250 VGE = 0V, VCE = 1200V A 5000 VGE = 0V, VCE = 1200V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 85 13 31 20 17 650 520 0.70 10.42 11.12 20 19 850 1150 19.5 13 1840 110 18 Max. Units Conditions 130 IC = 20A 19 nC VCC = 400V See Fig.8 46 VGE = 15V -- -- TJ = 25C ns 970 IC = 20A, VCC = 960V 790 VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 9,10,14 22 -- TJ = 150C, -- IC = 20A, VCC = 960V ns -- VGE = 15V, RG = 10 -- Energy losses include "tail" -- mJ See Fig. 10,11,14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com IRG4PH40S 60 For both: Triangular wave: 50 Load C u rren t (A ) Duty cycle: 50% T J = 125C T sink= 90C Gate drive as specified Power Dissipation = 35W 40 Clamp voltage: 80% of rated Square wave: 30 60% of rated voltage 20 10 Ideal diodes 0 0.1 1 10 A 100 f, F re q u e n c y (kH z ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 100 TJ = 25 C T = 150 C J TJ = 150 C TJ = 25 C 10 10 1 1.0 V GE = 15V 20s PULSE WIDTH 2.0 3.0 4.0 5.0 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 5s PULSE WIDTH www.irf.com 3 IRG4PH40S 35 3.0 Maximum DC Collector Current(A) 30 25 20 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH I C = 40 A 2.0 15 10 I C = 20 A I C = 10 A 1.0 -60 -40 -20 5 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH40S 4000 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 20A 16 C, Capacitance (pF) 3000 Cies 2000 12 8 Coes 1000 Cres 0 1 10 4 0 0 20 40 60 80 100 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 13 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 960V V GE = 15V TJ = 25 C I C = 20A 100 RG = 10 VGE = 15V VCC = 960V IC = 40 A IC = 20 A 12 10 IC = 10 A 11 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH40S 50 Total Switching Losses (mJ) RG TJ VCC 40 VGE = 10 = 150 C = 960V = 15V 1000 VGE = 20V T J = 125 oC 30 20 I C , Collector Current (A) 100 10 10 SAFE OPERATING AREA 0 10 20 30 40 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PH40S L 50V 1 00 0V VC * 0 - 960V D .U .T. RL = 960V 2 X IC @25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V * Driver same type as D.U.T., VC = 960V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 90 % 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PH40S Case Outline and Dimensions -- TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 14 .80 (.583 ) 14 .20 (.559 ) 4.30 (.1 70) 3.70 (.1 45) 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5.45 (.2 15 ) L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M C AS 2X 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 8 www.irf.com |
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